STUDY OF GaAs SURFACE AFTER ETCHING IN PLASMA OF FREON R12 BY AFM

Authors

  • D.B. Murin Scientific-Research Institute of Thermodynamics and kinetics of chemical processes Ivanovo State University of Chemistry and Technology 153000 Ivanovo, av. Ф. Энгельс, 7
  • A.V. Dunaev Scientific-Research Institute of Thermodynamics and kinetics of chemical processes Ivanovo State University of Chemistry and Technology 153000 Ivanovo, av. Ф. Энгельс, 7
  • S.A. Pivovarennok Scientific-Research Institute of Thermodynamics and kinetics of chemical processes Ivanovo State University of Chemistry and Technology 153000 Ivanovo, av. Ф. Энгельс, 7
  • D.A. Alyakin Scientific-Research Institute of Thermodynamics and kinetics of chemical processes Ivanovo State University of Chemistry and Technology 153000 Ivanovo, av. Ф. Энгельс, 7

Keywords:

plasma etching, freon, atomic force microscopy, plasma-chemical processes, the plasma gas

Abstract

Plasma etching of gallium arsenide in RF discharge in freon R-12 was carried out. It is shown that the adjustment of parameters such as the sample’s handling time and bias potential determine the quality of the future semiconductor structure. Nevertheless, samples surface quality control remains an urgent task of modern electronics. In this paper, the samples surface control was carried out by atomic force microscope Solver - P47Pro.

References

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Published

2015-12-20

How to Cite

Murin, D., Dunaev, A., Pivovarennok, S., & Alyakin, D. (2015). STUDY OF GaAs SURFACE AFTER ETCHING IN PLASMA OF FREON R12 BY AFM. Combustion and Plasma Chemistry, 13(4), 265–270. Retrieved from https://cpc-journal.kz/index.php/cpcj/article/view/344

Issue

Vol. 13 No. 4 (2015): COMBUSTION AND PLASMA CHEMISTRY

Section

Статьи

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This work is licensed under a Creative Commons Attribution 4.0 International License.