Модифицирование поверхности арамидных пленок в плазме кислорода и аргона

К.А. Джбааи; В.А. Титов; Т.Г. Шикова

doi:10.18321/

Authors

K.A. Dzhbaai Ivanovo State University of Chemistry and Technology, Sheremetevsky ave. 7, 153000, Ivanovo
V.A. Titov Institute of Solution Chemistry, Russian Academy of Sciences, Academic st. 4, 153045, Ivanovo
T.G. Shykova Ivanovo State University of Chemistry and Technology, Sheremetevsky ave. 7, 153000, Ivanovo

DOI:

https://doi.org/10.18321/

Keywords:

plasma, oxygen, argon, modification, surface

Abstract

Processes of plasma modification and destruction of aramid films have been studied. The films were treated in argon and oxygen low-pressure direct current discharges at pressures of 30 and 150 Pa and discharge currents of 20 and 50 mA. Treatment in oxygen plasma was shown to be an effective method for increasing surface wettability, oxygen content in thin surface layer and surface roughness. These effects are less after the treatment in argon plasma.

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