Ion and ion-chemical etching of metal films in dense plasma of RF inductive discharge

Authors

  • I.I. Amirov Physics and Technology Institute of the Russian Academy of Sciences, University St. 21, 150007, Yaroslavl
  • M.O. Izyumov Physics and Technology Institute of the Russian Academy of Sciences, University St. 21, 150007, Yaroslavl
  • V.V. Naumov Physics and Technology Institute of the Russian Academy of Sciences, University St. 21, 150007, Yaroslavl

DOI:

https://doi.org/10.18321/

Keywords:

plasma, etching, metals, induction discharge, films

Abstract

The results of investigation of sputtering WTi, Ta, Pt, Al, Cu, Сr end Co thin films by Ar ions at the low ion energy (Еi<150 эВ) in Ar plasma and chemical sputtering of Co and Cr in Ar/O2 plasma of RF inductive low pressure discharge are presented. The obtained data set is good consistent with the literature data.

References

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Published

2014-09-19

How to Cite

Amirov, I., Izyumov, M., & Naumov, V. (2014). Ion and ion-chemical etching of metal films in dense plasma of RF inductive discharge. Combustion and Plasma Chemistry, 12(3), 189-193. https://doi.org/10.18321/