SEM STUDY of SiC and C NANOSTRUCTURES OBTAINED by the METHOD of MW-CVD
In this article are presented results of experiments on the synthesis of SiC and C nanostructures (NS) by chemical vapor deposition in microwave plasma. The plates of polished monocrystalline and porous silicon were used as substrates. Studies by scanning electron microscopy showed that formed NS have a diameter of 200-350 nm and rough surface. The formation of NS on the polished Si occurs on the SiC buffer layer. Analysis of SEM images of the sample shows that growth of NS on the surface of porous silicon is more widespread in contrast to the polished Si. The results of studies by Raman scattering confirmed that SiC film with structure of 3C-SiC is formed on the polished Si. Besides, need to note the presence of main carbon peaks on both types of substrates in the range of 1338.2 and 1583 cm-1, which correspond to the carbon nanostructures.
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