STUDY OF GAAS SURFACE AFTER PLASMA ETCHING IN MIXTURES OF HCl/Ar, Cl2, H2 BY AFM

  • A. V. Dunaev Research Institute of thermodynamics and kinetics of chemical processes Ivanovo State University of Chemistry and Technology, av. Engels 7, Ivanovo, Russia
  • D. A. Alyakin Research Institute of thermodynamics and kinetics of chemical processes Ivanovo State University of Chemistry and Technology, av. Engels 7, Ivanovo, Russia
Keywords: Plasma, etching, the mixture, hydrogen chloride, discharge

Abstract

Chlorine containing plasma and its mixture with molecular and inert gases is often used for the formation of topology on a semiconductor surface. In this article, a comparative study of the semiconductor structure surface quality after plasma chemical etching in HCl/Ar, Cl2, H2 mixtures was carried out. The high etching rate in chlorine leads to many undesirable effects, while hydrogen chloride plasma and its mixtures allows to run the etching with better uniformity and purity of the process. Nevertheless, samples surface quality control remains an urgent task of modern electronics. In this paper, the samples surface control was carried out by atomic force microscope Solver - P47Pro.

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Published
2015-05-26
How to Cite
Dunaev, A., & Alyakin, D. (2015). STUDY OF GAAS SURFACE AFTER PLASMA ETCHING IN MIXTURES OF HCl/Ar, Cl2, H2 BY AFM. COMBUSTION AND PLASMA CHEMISTRY, 13(2), 148-153. Retrieved from https://cpc-journal.kz/index.php/cpc/article/view/21